Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

This article will review results concerning reliability of High Electron Mobility Transistors (HEMTs) based on GaN, which currently represent the technology choice for high efficiency microwave and millimeter-wave power amplifiers. Several failure mechanisms these devices have been extensively studied, including converse piezoelectric effects, formation conductive percolation paths at edge gate towards drain, surface oxidation time dependent breakdown GaN buffer field-plate dielectric. For HEMTs with scaled length, simultaneous control short-channel deep-level dispersion hot-electron-induced degradation requires a careful optimization epitaxial material quality device design. is protected by copyright. All rights reserved.